INSP - Sorbonne Université - 4 place Jussieu - 75005 Paris - Barre 22-12, 4e étage, salle 426
Juliette Mangeney - LPA (ENS)
Abstract
Graphene possesses many exceptional properties that are highly attractive to develop new THz technology, such as a gap-less electronic band structure, high electron mobility and large optical phonon energy. In this talk, I will first present coherent THz emission from graphene relying on photon drag effect. I will then show the existence of interband transitions in graphene at THz frequencies suggesting that THz lasing in graphene may be possible. I will also discuss the relaxation of hot carriers close to the Dirac point in graphene-hBN van der Waals heterostructures and their out-of-plane coupling to the hyperbolic phonon polaritons in the hBN material.